Mitigating Field Enhancement in Metasurfaces and Metamaterials for High-Power Microwave Applications

Jeremy A. Bossard, Clinton P. Scarborough, Qi Wu, Sawyer D. Campbell, Douglas H. Werner, Pingjuan L. Werner, Scott Griffiths, Matthew Ketner

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Metasurfaces and metamaterials have been explored extensively in recent years for their ability to enable a variety of innovative microwave devices. However, because their exotic properties often arise from resonant structures, the large field enhancements under high-power microwave illumination can lead to dielectric breakdown and damage to the device. In order to develop metasurfaces and metamaterials capable of being utilized in high-power microwave applications, this paper investigates techniques for reducing the maximum field enhancement factor (MFEF) in several types of structures from the literature. Starting with a simple Sievenpiper metasurface, this paper evaluates the dependence of MFEF on the structure design parameters. For more complex metasurface geometries, a genetic algorithm is demonstrated that can evolve structures that have minimal MFEF. In addition, negative-index and low-index metamaterials are evaluated for field enhancement. By optimizing for low loss and by operating in the resonance tails, metamaterials with low MFEF can be realized for high-power applications. To illustrate this, a quad-beam focusing metamaterial lens is presented with an MFEF less than 5 over the entire operating band.

Original languageEnglish (US)
Article number7728038
Pages (from-to)5309-5319
Number of pages11
JournalIEEE Transactions on Antennas and Propagation
Volume64
Issue number12
DOIs
StatePublished - Dec 2016

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Mitigating Field Enhancement in Metasurfaces and Metamaterials for High-Power Microwave Applications'. Together they form a unique fingerprint.

  • Cite this