MIXED convection in a large area atmospheric pressure CVD reactor

S. P. Vanka, Gang Luo, Nick G. Glumac

    Research output: Contribution to conferencePaperpeer-review

    Abstract

    This paper investigates a new CVD reactor geometry to deposit uniform films on large area substrates at atmospheric pressure. The reactor employs a stagnation flow geometry with an impinging central jet. The substrate is also rotated in order to get film uniformity. Calculations have been performed for a wide range of parameters to investigate the effects of inlet flow rates, substrate rotation, and height of the reactor chamber. It is seen that for some combinations of the parameters the flow above the wafer is unsteady. The unsteadiness of the flow is subsequent to the sharp turning at the conclusion of the inlet nozzle. The sudden expansion makes the shear layer unsteady much in the same way as the flow in a sudden expansion. Thus, the effect of rounded corners on damping such instabilities of the shear layers is explored. By employing the rounded corners, we have been able to reduce the RMS nonuniformity to about 1% at atmospheric pressure on 30 cm wafer. The impinging jet geometry can therefore be used for the deposition of many thin solid films without the penalty of a vacuum system and associated equipment costs.

    Original languageEnglish (US)
    Pages901-911
    Number of pages11
    DOIs
    StatePublished - Jan 1 2004
    EventProceedings of the ASME Heat Transfer/Fluids Engineering Summer Conference 2004, HT/FED 2004 - Charlotte, NC, United States
    Duration: Jul 11 2004Jul 15 2004

    Other

    OtherProceedings of the ASME Heat Transfer/Fluids Engineering Summer Conference 2004, HT/FED 2004
    CountryUnited States
    CityCharlotte, NC
    Period7/11/047/15/04

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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