Mn-doped 0.15BiInO 3-0.85PbTiO 3 piezoelectric films deposited by pulsed laser deposition

Sun Young Lee, Song Won Ko, Soonil Lee, Susan Trolier-Mckinstry

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Abstract

Undoped, 0.5 and 1.0 mol. Mn-doped 0.15BiInO 3-0.85PbTiO 3 films were grown on PbTiO 3/Pt/Ti/SiO 2/Si substrates by pulsed laser deposition. Phase-pure perovskite films were obtained at a substrate temperature of 585 °C irrespective of Mn doping level. The 0.5 mol. Mn-doped films showed a room temperature permittivity of 480 and a dielectric loss tangent of 0.015 at 100 kHz after 650 °C post-deposition annealing. The coercive field and remanent polarization were 80 kV/cm and 29 C/cm 2, respectively. The ferroelectric transition temperature of the films ranged from 535 to 585 °C. The e 31,f piezoelectric coefficient was -7.1 μC/m 2. X-ray diffraction and phase transition temperature data showed that the Mn atoms substitute on the Ti-site as Mn 3; the resulting films have p-type conduction characteristics.

Original languageEnglish (US)
Article number212905
JournalApplied Physics Letters
Volume100
Issue number21
DOIs
StatePublished - May 21 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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