Mobility overestimation due to gated contacts in organic field-effect transistors

Emily G. Bittle, James I. Basham, Thomas Nelson Jackson, Oana D. Jurchescu, David J. Gundlach

Research output: Contribution to journalArticle

215 Citations (Scopus)

Abstract

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm 2 V -1 s -1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more.

Original languageEnglish (US)
Article number10908
JournalNature communications
Volume7
DOIs
StatePublished - Mar 10 2016

Fingerprint

Organic field effect transistors
Contact resistance
field effect transistors
Equipment and Supplies
Drain current
Electric potential
MOSFET devices
electric potential
Current voltage characteristics
contact resistance
Threshold voltage
Dielectric Spectroscopy
Semiconductors
Transistors
Electric properties
Single crystals
Spectroscopy
Oxides
Metals
metal oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Bittle, Emily G. ; Basham, James I. ; Jackson, Thomas Nelson ; Jurchescu, Oana D. ; Gundlach, David J. / Mobility overestimation due to gated contacts in organic field-effect transistors. In: Nature communications. 2016 ; Vol. 7.
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Mobility overestimation due to gated contacts in organic field-effect transistors. / Bittle, Emily G.; Basham, James I.; Jackson, Thomas Nelson; Jurchescu, Oana D.; Gundlach, David J.

In: Nature communications, Vol. 7, 10908, 10.03.2016.

Research output: Contribution to journalArticle

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T1 - Mobility overestimation due to gated contacts in organic field-effect transistors

AU - Bittle, Emily G.

AU - Basham, James I.

AU - Jackson, Thomas Nelson

AU - Jurchescu, Oana D.

AU - Gundlach, David J.

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AB - Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm 2 V -1 s -1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more.

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