MOCVD-grown AlGaN buffer GaN HEMTs with V-Gates for microwave power applications

Rongming Chu, Zhen Chen, Yi Pei, Scott Newman, Steven P. DenBaars, Umesh K. Mishra

Research output: Contribution to journalArticle

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Abstract

We report the performance of AlGaN buffer GaN high-electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition. GaN HEMTs on high-quality AlGaN buffer were grown on SiC substrates. The incorporation of an AlGaN buffer into the GaN HEMT significantly improves channel confinement and suppresses the short-channel effect. Advanced deep-recess V-gate structures were employed to optimize the device for better microwave power performance. With a 10-nm GaN channel layer sandwiched between the AlGaN barrier and buffer, excellent power performance was achieved. The output power density is 13.1 W/mm, and the associated power-added efficiency is 72% at 4-GHz frequency and 48-V drain bias. This power performance is comparable to the state-of-the-art GaN HEMTs grown on GaN buffers, indicating that the AlGaN buffer in our optimized device structure does not introduce any noticeable trapping.

Original languageEnglish (US)
Pages (from-to)910-912
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number9
DOIs
Publication statusPublished - Aug 7 2009

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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