Model for channel hot carrier reliability degradation due to plasma damage in MOS devices

Sanjay Rangan, Srikanth Krishnan, Ajith Amerasekara, Shian Aur, S Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

An empirical relation between device channel hot carrier lifetime and process induced damage has been developed, by correlating the antenna ratio (AR) to the channel hot carrier lifetime (τ) of both N- and P-MOSFET's. A 10X increase in AR results in a 7X fall in its normalized lifetime for NMOS and a 10X fall for the PMOS. A process constant P and a device constant D have been introduced. Process-related factors such as reactor design and process conditions are accounted for by P, while D includes the device features, such as gate-drain overlap and dielectric technology.

Original languageEnglish (US)
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages370-374
Number of pages5
ISBN (Print)0780352203
StatePublished - Jan 1 1999
EventProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
Duration: Mar 23 1999Mar 25 1999

Other

OtherProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA
Period3/23/993/25/99

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Rangan, S., Krishnan, S., Amerasekara, A., Aur, S., & Ashok, S. (1999). Model for channel hot carrier reliability degradation due to plasma damage in MOS devices. In Annual Proceedings - Reliability Physics (Symposium) (pp. 370-374). IEEE.