Modeling and characterization of atomically sharp "perfect" Ge/SiC2 interfaces

Wolfgang Windl, Tao Liang, Sergei Lopatin, Gerd Duscher

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have shown that oxidation of germanium-implanted Si can produce a pile-up of Ge in front of the oxidation front and produce an atomically-sharp interface. In this paper, we examine band-structure and processing of such an interface. Based on ab-initio calculations, the band structure of the sharp interface seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiC2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys. The model explains the formation of the sharp interface due to the repulsive interaction between O and Ge. Furthermore, inclusion of Ge into the oxide is predicted for higher Ge concentrations, in agreement with experiment.

Original languageEnglish (US)
Pages (from-to)156-161
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume114-115
Issue numberSPEC. ISS.
DOIs
StatePublished - Dec 30 2004

Fingerprint

Band structure
Oxidation
Germanium
oxidation
Oxides
Piles
piles
Processing
germanium
inclusions
Experiments
oxides
electronics
interactions
Si-Ge alloys

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Windl, Wolfgang ; Liang, Tao ; Lopatin, Sergei ; Duscher, Gerd. / Modeling and characterization of atomically sharp "perfect" Ge/SiC2 interfaces. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2004 ; Vol. 114-115, No. SPEC. ISS. pp. 156-161.
@article{bf6c227cdb30411db4a41a14e8a71031,
title = "Modeling and characterization of atomically sharp {"}perfect{"} Ge/SiC2 interfaces",
abstract = "We have shown that oxidation of germanium-implanted Si can produce a pile-up of Ge in front of the oxidation front and produce an atomically-sharp interface. In this paper, we examine band-structure and processing of such an interface. Based on ab-initio calculations, the band structure of the sharp interface seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiC2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys. The model explains the formation of the sharp interface due to the repulsive interaction between O and Ge. Furthermore, inclusion of Ge into the oxide is predicted for higher Ge concentrations, in agreement with experiment.",
author = "Wolfgang Windl and Tao Liang and Sergei Lopatin and Gerd Duscher",
year = "2004",
month = "12",
day = "30",
doi = "10.1016/j.mseb.2004.07.041",
language = "English (US)",
volume = "114-115",
pages = "156--161",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "SPEC. ISS.",

}

Modeling and characterization of atomically sharp "perfect" Ge/SiC2 interfaces. / Windl, Wolfgang; Liang, Tao; Lopatin, Sergei; Duscher, Gerd.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 114-115, No. SPEC. ISS., 30.12.2004, p. 156-161.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Modeling and characterization of atomically sharp "perfect" Ge/SiC2 interfaces

AU - Windl, Wolfgang

AU - Liang, Tao

AU - Lopatin, Sergei

AU - Duscher, Gerd

PY - 2004/12/30

Y1 - 2004/12/30

N2 - We have shown that oxidation of germanium-implanted Si can produce a pile-up of Ge in front of the oxidation front and produce an atomically-sharp interface. In this paper, we examine band-structure and processing of such an interface. Based on ab-initio calculations, the band structure of the sharp interface seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiC2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys. The model explains the formation of the sharp interface due to the repulsive interaction between O and Ge. Furthermore, inclusion of Ge into the oxide is predicted for higher Ge concentrations, in agreement with experiment.

AB - We have shown that oxidation of germanium-implanted Si can produce a pile-up of Ge in front of the oxidation front and produce an atomically-sharp interface. In this paper, we examine band-structure and processing of such an interface. Based on ab-initio calculations, the band structure of the sharp interface seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiC2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys. The model explains the formation of the sharp interface due to the repulsive interaction between O and Ge. Furthermore, inclusion of Ge into the oxide is predicted for higher Ge concentrations, in agreement with experiment.

UR - http://www.scopus.com/inward/record.url?scp=10644292532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10644292532&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2004.07.041

DO - 10.1016/j.mseb.2004.07.041

M3 - Article

AN - SCOPUS:10644292532

VL - 114-115

SP - 156

EP - 161

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - SPEC. ISS.

ER -