Modeling and comparative analysis of hysteretic ferroelectric and anti-ferroelectric FETs

Atanu K. Saha, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we analyze ferroelectric (FE) and anti-ferroelectric (AFE) field effect transistors (FETs) (shown in Fig. 1(a)) and compare their subthreshold characteristics and hysteretic behavior. To facilitate this analysis, we develop a Preisach based [1] circuit compatible model for FE/AFE. Whereas in FE capacitor the two stable polarization (P) states are -PR and +PR, in case of AFE capacitor, non-volatility can be achieved within →+PR by imposing a built-in potential through work-function engineering (Fig, 1(b)). However, in FE/APEFETs, FE/AFE can be partially polarized (forming minor P-Vloop), which we analyze in this paper. Finally, correlating the negative capacitance (NC) effect in FE/AFE with domain-wall propagation [2], we explore the steep subthreshold swing (SS) characteristics of FE/APE-FET and analyze their transient nature and dependence on flat-band voltage (VFB) and maximum applied gate voltage (VGS).

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2018-June
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

Fingerprint

Field effect transistors
Ferroelectric materials
Capacitors
Domain walls
Electric potential
Capacitance
Polarization

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Saha, A. K., & Gupta, S. K. (2018). Modeling and comparative analysis of hysteretic ferroelectric and anti-ferroelectric FETs. In 2018 76th Device Research Conference, DRC 2018 (Vol. 2018-June). [8442136] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442136
Saha, Atanu K. ; Gupta, Sumeet Kumar. / Modeling and comparative analysis of hysteretic ferroelectric and anti-ferroelectric FETs. 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018.
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Saha, AK & Gupta, SK 2018, Modeling and comparative analysis of hysteretic ferroelectric and anti-ferroelectric FETs. in 2018 76th Device Research Conference, DRC 2018. vol. 2018-June, 8442136, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 6/24/18. https://doi.org/10.1109/DRC.2018.8442136

Modeling and comparative analysis of hysteretic ferroelectric and anti-ferroelectric FETs. / Saha, Atanu K.; Gupta, Sumeet Kumar.

2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018. 8442136.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this paper, we analyze ferroelectric (FE) and anti-ferroelectric (AFE) field effect transistors (FETs) (shown in Fig. 1(a)) and compare their subthreshold characteristics and hysteretic behavior. To facilitate this analysis, we develop a Preisach based [1] circuit compatible model for FE/AFE. Whereas in FE capacitor the two stable polarization (P) states are -PR and +PR, in case of AFE capacitor, non-volatility can be achieved within →+PR by imposing a built-in potential through work-function engineering (Fig, 1(b)). However, in FE/APEFETs, FE/AFE can be partially polarized (forming minor P-Vloop), which we analyze in this paper. Finally, correlating the negative capacitance (NC) effect in FE/AFE with domain-wall propagation [2], we explore the steep subthreshold swing (SS) characteristics of FE/APE-FET and analyze their transient nature and dependence on flat-band voltage (VFB) and maximum applied gate voltage (VGS).

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Saha AK, Gupta SK. Modeling and comparative analysis of hysteretic ferroelectric and anti-ferroelectric FETs. In 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June. Institute of Electrical and Electronics Engineers Inc. 2018. 8442136 https://doi.org/10.1109/DRC.2018.8442136