Modeling hysteresis phenomena in nanotube field-effect transistors

Arnaud Robert-Peillard, Slava V. Rotkin

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of different parameters such as the sweeping rate or the range of the gate voltage on the hysteresis is studied and compared with experimental results.

Original languageEnglish (US)
Pages (from-to)284-288
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume4
Issue number2
DOIs
StatePublished - Mar 2005

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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