Modeling of in-plane distortions due to variations in absorber stress

M. Laudon, R. Engelstad, K. Thole, W. Dauksher, D. Resnick, K. Cummings, P. Seese, W. Johnson

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


The effort to achieve sub-0.25 μm X-ray lithography depends, in part, on the ability to maintain strict fabrication control leading to low distortion X-ray masks. This paper presents finite element (FE) models developed to identify sources of pattern in-plane distortions (IPD) during mask fabrication. In particular, mask fabrication processes inducing both uniform and non-uniform absorber stresses and the resulting distortions due pattern transferring through these stressed layers have been investigated.

Original languageEnglish (US)
Pages (from-to)227-230
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Jan 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


Dive into the research topics of 'Modeling of in-plane distortions due to variations in absorber stress'. Together they form a unique fingerprint.

Cite this