Modeling of in-plane distortions due to variations in absorber stress

M. Laudon, R. Engelstad, Karen Ann Thole, W. Dauksher, D. Resnick, K. Cummings, P. Seese, W. Johnson

    Research output: Contribution to journalArticle

    10 Citations (Scopus)

    Abstract

    The effort to achieve sub-0.25 μm X-ray lithography depends, in part, on the ability to maintain strict fabrication control leading to low distortion X-ray masks. This paper presents finite element (FE) models developed to identify sources of pattern in-plane distortions (IPD) during mask fabrication. In particular, mask fabrication processes inducing both uniform and non-uniform absorber stresses and the resulting distortions due pattern transferring through these stressed layers have been investigated.

    Original languageEnglish (US)
    Pages (from-to)227-230
    Number of pages4
    JournalMicroelectronic Engineering
    Volume30
    Issue number1-4
    DOIs
    StatePublished - Jan 1 1996

    Fingerprint

    Masks
    absorbers
    masks
    Fabrication
    fabrication
    X ray lithography
    x rays
    lithography
    X rays

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

    Cite this

    Laudon, M., Engelstad, R., Thole, K. A., Dauksher, W., Resnick, D., Cummings, K., ... Johnson, W. (1996). Modeling of in-plane distortions due to variations in absorber stress. Microelectronic Engineering, 30(1-4), 227-230. https://doi.org/10.1016/0167-9317(95)00233-2
    Laudon, M. ; Engelstad, R. ; Thole, Karen Ann ; Dauksher, W. ; Resnick, D. ; Cummings, K. ; Seese, P. ; Johnson, W. / Modeling of in-plane distortions due to variations in absorber stress. In: Microelectronic Engineering. 1996 ; Vol. 30, No. 1-4. pp. 227-230.
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    Laudon, M, Engelstad, R, Thole, KA, Dauksher, W, Resnick, D, Cummings, K, Seese, P & Johnson, W 1996, 'Modeling of in-plane distortions due to variations in absorber stress', Microelectronic Engineering, vol. 30, no. 1-4, pp. 227-230. https://doi.org/10.1016/0167-9317(95)00233-2

    Modeling of in-plane distortions due to variations in absorber stress. / Laudon, M.; Engelstad, R.; Thole, Karen Ann; Dauksher, W.; Resnick, D.; Cummings, K.; Seese, P.; Johnson, W.

    In: Microelectronic Engineering, Vol. 30, No. 1-4, 01.01.1996, p. 227-230.

    Research output: Contribution to journalArticle

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    AU - Thole, Karen Ann

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    AU - Resnick, D.

    AU - Cummings, K.

    AU - Seese, P.

    AU - Johnson, W.

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    AB - The effort to achieve sub-0.25 μm X-ray lithography depends, in part, on the ability to maintain strict fabrication control leading to low distortion X-ray masks. This paper presents finite element (FE) models developed to identify sources of pattern in-plane distortions (IPD) during mask fabrication. In particular, mask fabrication processes inducing both uniform and non-uniform absorber stresses and the resulting distortions due pattern transferring through these stressed layers have been investigated.

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