Modeling of near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO₂MOSFETs

Near zero-field magnetoresistance (NZFMR) spectroscopy has the potential to provide chemical and physical information on radiation damage in 3-D integrated circuits. Electrically detected magnetic resonance (EDMR) has provided chemical and physical information for several decades but is limited in applicability due to the need for an RF electromagnetic field. We model NZFMR and EDMR in Si/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs) by including spin-dependent recombination and hyperfine interactions in stochastic Liouville equations. We find that to accurately describe both NZFMR and EDMR, both the defect spin and conduction spin has to interact with a bath of nuclear spins, which are assumed to be composed of combinations of 29Si and hydrogen.