Modeling of organic thin film transistors of different designs

P. V. Necliudov, M. S. Shur, D. J. Gundlach, T. N. Jackson

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Abstract

We report on modeling of direct current (DC) characteristics of organic pentacene thin film transistors of different designs. Our model incorporates a gate-voltage dependent mobility and highly nonlinear drain and source contact series resistances. The contact nonlinearities are especially pronounced in bottom source and drain contact thin film transistors. The model successfully reproduced both below- and above-threshold characteristics of top source and drain contact and bottom source and drain contact organic pentacene thin film transistors.

Original languageEnglish (US)
Pages (from-to)6594-6597
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number11
DOIs
Publication statusPublished - Dec 2000

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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