Modeling of organic thin film transistors of different designs

P. V. Necliudov, M. S. Shur, D. J. Gundlach, Thomas Nelson Jackson

Research output: Contribution to journalArticle

276 Citations (Scopus)

Abstract

We report on modeling of direct current (DC) characteristics of organic pentacene thin film transistors of different designs. Our model incorporates a gate-voltage dependent mobility and highly nonlinear drain and source contact series resistances. The contact nonlinearities are especially pronounced in bottom source and drain contact thin film transistors. The model successfully reproduced both below- and above-threshold characteristics of top source and drain contact and bottom source and drain contact organic pentacene thin film transistors.

Original languageEnglish (US)
Pages (from-to)6594-6597
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number11
DOIs
StatePublished - Dec 1 2000

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transistors
thin films
thresholds
direct current
nonlinearity
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Necliudov, P. V. ; Shur, M. S. ; Gundlach, D. J. ; Jackson, Thomas Nelson. / Modeling of organic thin film transistors of different designs. In: Journal of Applied Physics. 2000 ; Vol. 88, No. 11. pp. 6594-6597.
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Modeling of organic thin film transistors of different designs. / Necliudov, P. V.; Shur, M. S.; Gundlach, D. J.; Jackson, Thomas Nelson.

In: Journal of Applied Physics, Vol. 88, No. 11, 01.12.2000, p. 6594-6597.

Research output: Contribution to journalArticle

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