Modeling of retention characteristics for metal and semiconductor nanocrystal memories

Weihua Guan, Shibing Long, Ming Liu, Qi Liu, Yuan Hu, Zhigang Li, Rui Jia

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.

Original languageEnglish (US)
Pages (from-to)806-811
Number of pages6
JournalSolid-State Electronics
Volume51
Issue number5
DOIs
StatePublished - May 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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