Modeling of retention characteristics for metal and semiconductor nanocrystal memories

Weihua Guan, Shibing Long, Ming Liu, Qi Liu, Yuan Hu, Zhigang Li, Rui Jia

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.

Original languageEnglish (US)
Pages (from-to)806-811
Number of pages6
JournalSolid-State Electronics
Volume51
Issue number5
DOIs
StatePublished - May 1 2007

Fingerprint

Nanocrystals
nanocrystals
Metals
Semiconductor materials
Data storage equipment
metals
Quantum confinement
simulation
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Guan, Weihua ; Long, Shibing ; Liu, Ming ; Liu, Qi ; Hu, Yuan ; Li, Zhigang ; Jia, Rui. / Modeling of retention characteristics for metal and semiconductor nanocrystal memories. In: Solid-State Electronics. 2007 ; Vol. 51, No. 5. pp. 806-811.
@article{3a0b64495e264395900e82a46a8b757d,
title = "Modeling of retention characteristics for metal and semiconductor nanocrystal memories",
abstract = "The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.",
author = "Weihua Guan and Shibing Long and Ming Liu and Qi Liu and Yuan Hu and Zhigang Li and Rui Jia",
year = "2007",
month = "5",
day = "1",
doi = "10.1016/j.sse.2007.03.017",
language = "English (US)",
volume = "51",
pages = "806--811",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "5",

}

Modeling of retention characteristics for metal and semiconductor nanocrystal memories. / Guan, Weihua; Long, Shibing; Liu, Ming; Liu, Qi; Hu, Yuan; Li, Zhigang; Jia, Rui.

In: Solid-State Electronics, Vol. 51, No. 5, 01.05.2007, p. 806-811.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Modeling of retention characteristics for metal and semiconductor nanocrystal memories

AU - Guan, Weihua

AU - Long, Shibing

AU - Liu, Ming

AU - Liu, Qi

AU - Hu, Yuan

AU - Li, Zhigang

AU - Jia, Rui

PY - 2007/5/1

Y1 - 2007/5/1

N2 - The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.

AB - The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-κ dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals.

UR - http://www.scopus.com/inward/record.url?scp=34248644583&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248644583&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.03.017

DO - 10.1016/j.sse.2007.03.017

M3 - Article

VL - 51

SP - 806

EP - 811

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 5

ER -