Modeling study of GaN growth by MOVPE

S. A. Safvi, Joan Marie Redwing, M. A. Tischler, T. F. Kuech

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A model for the growth of gallium nitride in a vertical metalorganic vapor phase epitaxy reactor is presented. For a mixture of non-dilute gases, the flow temperature and concentration profiles are predicted. The results show that the growth of GaN epilayers is through an intermediate adduct of TMG and ammonia. Growth rates are predicted based on simple reaction mechanisms and compared with those obtained experimentally. Loss of adduct species due to polymerization leads to lowering in growth rate. An attempt to quantify loss of reacting species is made based on experimentally observed growth rates.

Original languageEnglish (US)
Pages (from-to)255-260
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume395
StatePublished - 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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