Modeling the back gate effects of AlGaN/GaN HEMTs

Li Wang, Xuefeng Zhang, Guanjun You, Feng Xiong, Lixin Liang, Yong Hu, Aping Chen, Jie Liu, Jian Xu

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the performance of the AlGaN/GaN DG HEMTs and single-gate devices. The results show that the DG GaN-HEMTs can potentially offer a higher transconductance gain and better immunity of the short channel effects of drain induced barrier lowering and subthreshold swing than traditional single-gate HEMTs.

Original languageEnglish (US)
Pages (from-to)872-876
Number of pages5
JournalJournal of Computational Electronics
Volume13
Issue number4
DOIs
StatePublished - Dec 1 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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    Wang, L., Zhang, X., You, G., Xiong, F., Liang, L., Hu, Y., Chen, A., Liu, J., & Xu, J. (2014). Modeling the back gate effects of AlGaN/GaN HEMTs. Journal of Computational Electronics, 13(4), 872-876. https://doi.org/10.1007/s10825-014-0603-y