Modeling the back gate effects of AlGaN/GaN HEMTs

Li Wang, Xuefeng Zhang, Guanjun You, Feng Xiong, Lixin Liang, Yong Hu, Aping Chen, Jie Liu, Jian Xu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the performance of the AlGaN/GaN DG HEMTs and single-gate devices. The results show that the DG GaN-HEMTs can potentially offer a higher transconductance gain and better immunity of the short channel effects of drain induced barrier lowering and subthreshold swing than traditional single-gate HEMTs.

Original languageEnglish (US)
Pages (from-to)872-876
Number of pages5
JournalJournal of Computational Electronics
Volume13
Issue number4
DOIs
StatePublished - Dec 1 2014

Fingerprint

AlGaN
High electron mobility transistors
high electron mobility transistors
Electron
Modeling
Heterostructures
Immunity
Two dimensional electron gas
Transconductance
Heterojunctions
immunity
transconductance
electron gas
aluminum gallium nitride
Simulation
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

Cite this

Wang, Li ; Zhang, Xuefeng ; You, Guanjun ; Xiong, Feng ; Liang, Lixin ; Hu, Yong ; Chen, Aping ; Liu, Jie ; Xu, Jian. / Modeling the back gate effects of AlGaN/GaN HEMTs. In: Journal of Computational Electronics. 2014 ; Vol. 13, No. 4. pp. 872-876.
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Wang, L, Zhang, X, You, G, Xiong, F, Liang, L, Hu, Y, Chen, A, Liu, J & Xu, J 2014, 'Modeling the back gate effects of AlGaN/GaN HEMTs', Journal of Computational Electronics, vol. 13, no. 4, pp. 872-876. https://doi.org/10.1007/s10825-014-0603-y

Modeling the back gate effects of AlGaN/GaN HEMTs. / Wang, Li; Zhang, Xuefeng; You, Guanjun; Xiong, Feng; Liang, Lixin; Hu, Yong; Chen, Aping; Liu, Jie; Xu, Jian.

In: Journal of Computational Electronics, Vol. 13, No. 4, 01.12.2014, p. 872-876.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Wang, Li

AU - Zhang, Xuefeng

AU - You, Guanjun

AU - Xiong, Feng

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AU - Hu, Yong

AU - Chen, Aping

AU - Liu, Jie

AU - Xu, Jian

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AB - This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the performance of the AlGaN/GaN DG HEMTs and single-gate devices. The results show that the DG GaN-HEMTs can potentially offer a higher transconductance gain and better immunity of the short channel effects of drain induced barrier lowering and subthreshold swing than traditional single-gate HEMTs.

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Wang L, Zhang X, You G, Xiong F, Liang L, Hu Y et al. Modeling the back gate effects of AlGaN/GaN HEMTs. Journal of Computational Electronics. 2014 Dec 1;13(4):872-876. https://doi.org/10.1007/s10825-014-0603-y