Modelling and experimental analysis of the impact of process induced stress on the electrical performance of GaAs MESFETs

P. J. McNally, J. J. Rosenberg, T. N. Jackson, J. C. Ramirez

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A combination of two-dimensional Finite Element Methods and two-dimensional electronic device simulations was implemented to evaluate the effects of stress-induced piezoelectric charge distributions on the performance of GaAs MESFETs. This study takes into account the overlayer stresses a priori thus allowing an assessment of the impact of changes in device structural parameters on the electrical characteristics of the device. A qualitative explanation for the dependency of both threshold voltage and subthreshold current slope on dielectric overlayer thickness is put forward. It is confirmed that a predominantly negative charge distribution under the gate region is preferable to a positive one as device performance is less sensitive to structural parameter variations.

Original languageEnglish (US)
Pages (from-to)1597-1612
Number of pages16
JournalSolid State Electronics
Volume36
Issue number11
DOIs
StatePublished - Nov 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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