Modelling hysteresis in vanadium dioxide oscillators

P. Maffezzoni, L. Daniel, N. Shukla, S. Datta, A. Raychowdhury, V. Narayanan

Research output: Contribution to journalShort survey

2 Scopus citations

Abstract

An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.

Original languageEnglish (US)
Pages (from-to)819-820
Number of pages2
JournalElectronics Letters
Volume51
Issue number11
DOIs
StatePublished - May 28 2015

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Modelling hysteresis in vanadium dioxide oscillators'. Together they form a unique fingerprint.

  • Cite this

    Maffezzoni, P., Daniel, L., Shukla, N., Datta, S., Raychowdhury, A., & Narayanan, V. (2015). Modelling hysteresis in vanadium dioxide oscillators. Electronics Letters, 51(11), 819-820. https://doi.org/10.1049/el.2015.0025