Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions

S. R. Shinde, S. B. Ogale, J. Higgins, R. J. Choudhary, V. N. Kulkarni, T. Venkatesan, H. Zheng, R. Ramesh, A. V. Pogrebnyakov, S. Y. Xu, Qi Li, X. X. Xi, J. M. Redwing, D. Kanjilal

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Abstract

The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.

Original languageEnglish (US)
Pages (from-to)2352-2354
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number13
DOIs
StatePublished - Mar 29 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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