Modification of low κ materials for ULSI multilevel interconnects by ion implantation

Alok Nandini U. Roy, A. Mallikarjunan, A. Kumar, J. Fortin, G. S. Shekhawat, Robert Geer, Katherine Dovidenko, Eric Lifshin, H. Bakhru, T. M. Lu

Research output: Contribution to journalConference article

Abstract

Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLKTM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm-2 and 1 × 1016 cm-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Original languageEnglish (US)
Pages (from-to)349-354
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume716
StatePublished - Dec 1 2002
EventSilicon Materials - Processing, Characterization and Reliability - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

Fingerprint

Ion implantation
ion implantation
hardness
Hardness
Argon
Neon
implantation
dosage
Helium
Xerogels
xerogels
argon
Ions
neon
Permittivity
Nitrogen
Carbon
helium
permittivity
nitrogen

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Roy, A. N. U., Mallikarjunan, A., Kumar, A., Fortin, J., Shekhawat, G. S., Geer, R., ... Lu, T. M. (2002). Modification of low κ materials for ULSI multilevel interconnects by ion implantation. Materials Research Society Symposium - Proceedings, 716, 349-354.
Roy, Alok Nandini U. ; Mallikarjunan, A. ; Kumar, A. ; Fortin, J. ; Shekhawat, G. S. ; Geer, Robert ; Dovidenko, Katherine ; Lifshin, Eric ; Bakhru, H. ; Lu, T. M. / Modification of low κ materials for ULSI multilevel interconnects by ion implantation. In: Materials Research Society Symposium - Proceedings. 2002 ; Vol. 716. pp. 349-354.
@article{38a1f06acc25497caf071df669962548,
title = "Modification of low κ materials for ULSI multilevel interconnects by ion implantation",
abstract = "Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLKTM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm-2 and 1 × 1016 cm-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15{\%}) in dielectric constant.",
author = "Roy, {Alok Nandini U.} and A. Mallikarjunan and A. Kumar and J. Fortin and Shekhawat, {G. S.} and Robert Geer and Katherine Dovidenko and Eric Lifshin and H. Bakhru and Lu, {T. M.}",
year = "2002",
month = "12",
day = "1",
language = "English (US)",
volume = "716",
pages = "349--354",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Roy, ANU, Mallikarjunan, A, Kumar, A, Fortin, J, Shekhawat, GS, Geer, R, Dovidenko, K, Lifshin, E, Bakhru, H & Lu, TM 2002, 'Modification of low κ materials for ULSI multilevel interconnects by ion implantation', Materials Research Society Symposium - Proceedings, vol. 716, pp. 349-354.

Modification of low κ materials for ULSI multilevel interconnects by ion implantation. / Roy, Alok Nandini U.; Mallikarjunan, A.; Kumar, A.; Fortin, J.; Shekhawat, G. S.; Geer, Robert; Dovidenko, Katherine; Lifshin, Eric; Bakhru, H.; Lu, T. M.

In: Materials Research Society Symposium - Proceedings, Vol. 716, 01.12.2002, p. 349-354.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Modification of low κ materials for ULSI multilevel interconnects by ion implantation

AU - Roy, Alok Nandini U.

AU - Mallikarjunan, A.

AU - Kumar, A.

AU - Fortin, J.

AU - Shekhawat, G. S.

AU - Geer, Robert

AU - Dovidenko, Katherine

AU - Lifshin, Eric

AU - Bakhru, H.

AU - Lu, T. M.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLKTM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm-2 and 1 × 1016 cm-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

AB - Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLKTM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm-2 and 1 × 1016 cm-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

UR - http://www.scopus.com/inward/record.url?scp=0036954930&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036954930&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036954930

VL - 716

SP - 349

EP - 354

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -