Modification of low κ materials for ULSI multilevel interconnects by ion implantation

Alok Nandini U. Roy, A. Mallikarjunan, A. Kumar, J. Fortin, G. S. Shekhawat, Robert Geer, Katherine Dovidenko, Eric Lifshin, H. Bakhru, T. M. Lu

Research output: Contribution to journalConference articlepeer-review

Abstract

Thin films of low dielectric constant (κ) materials such as Xerogel (κ=1.76) and SiLKTM(κ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm-2 and 1 × 1016 cm-2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low κ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5× hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Original languageEnglish (US)
Pages (from-to)349-354
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume716
StatePublished - Dec 1 2002
EventSilicon Materials - Processing, Characterization and Reliability - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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