Reactive ion etching of silicon with NF3 gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy. The energetic ions introduce a net positive surface charge which increases the barrier height on p-Si and decreases it on n-Si. The Schottky barrier modification is found to be a function of ion energy as well as gas plasma used.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1983|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)