Modification of Schottky barriers in silicon by reactive ion etching with NF3

S Ashok, T. P. Chow, B. J. Baliga

Research output: Contribution to journalArticle

72 Scopus citations

Abstract

Reactive ion etching of silicon with NF3 gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy. The energetic ions introduce a net positive surface charge which increases the barrier height on p-Si and decreases it on n-Si. The Schottky barrier modification is found to be a function of ion energy as well as gas plasma used.

Original languageEnglish (US)
Pages (from-to)687-689
Number of pages3
JournalApplied Physics Letters
Volume42
Issue number8
DOIs
StatePublished - Dec 1 1983

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this