Modification of Schottky barriers in silicon by reactive ion etching with NF3

S Ashok, T. P. Chow, B. J. Baliga

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

Reactive ion etching of silicon with NF3 gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy. The energetic ions introduce a net positive surface charge which increases the barrier height on p-Si and decreases it on n-Si. The Schottky barrier modification is found to be a function of ion energy as well as gas plasma used.

Original languageEnglish (US)
Pages (from-to)687-689
Number of pages3
JournalApplied Physics Letters
Volume42
Issue number8
DOIs
StatePublished - Dec 1 1983

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ashok, S ; Chow, T. P. ; Baliga, B. J. / Modification of Schottky barriers in silicon by reactive ion etching with NF3. In: Applied Physics Letters. 1983 ; Vol. 42, No. 8. pp. 687-689.
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Modification of Schottky barriers in silicon by reactive ion etching with NF3. / Ashok, S; Chow, T. P.; Baliga, B. J.

In: Applied Physics Letters, Vol. 42, No. 8, 01.12.1983, p. 687-689.

Research output: Contribution to journalArticle

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