MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

T. P. Chow, S Ashok, J. B. Baliga, W. Katz

Research output: Contribution to journalConference article

2 Scopus citations
Original languageEnglish (US)
Pages (from-to)284-285
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume83-1
StatePublished - Dec 1 1983

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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