MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

T. P. Chow, S Ashok, J. B. Baliga, W. Katz

Research output: Contribution to journalConference article

2 Citations (Scopus)
Original languageEnglish (US)
Pages (from-to)284-285
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume83-1
StatePublished - Dec 1 1983

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Reactive ion etching
Gas mixtures
Silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chow, T. P. ; Ashok, S ; Baliga, J. B. ; Katz, W. / MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES. In: Electrochemical Society Extended Abstracts. 1983 ; Vol. 83-1. pp. 284-285.
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title = "MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.",
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year = "1983",
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MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES. / Chow, T. P.; Ashok, S; Baliga, J. B.; Katz, W.

In: Electrochemical Society Extended Abstracts, Vol. 83-1, 01.12.1983, p. 284-285.

Research output: Contribution to journalConference article

TY - JOUR

T1 - MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

AU - Chow, T. P.

AU - Ashok, S

AU - Baliga, J. B.

AU - Katz, W.

PY - 1983/12/1

Y1 - 1983/12/1

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M3 - Conference article

VL - 83-1

SP - 284

EP - 285

JO - Electrochemical Society Extended Abstracts

JF - Electrochemical Society Extended Abstracts

SN - 0160-4619

ER -