MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.

T. P. Chow, S Ashok, B. J. Baliga, W. Katz

Research output: Contribution to conferencePaper

Original languageEnglish (US)
Pages101-113
Number of pages13
StatePublished - Dec 1 1983

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chow, T. P., Ashok, S., Baliga, B. J., & Katz, W. (1983). MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF//3 GAS MIXTURES.. 101-113.