Modified relaxor-PbTiO3 piezoelectrics for high temperature applications

Jong Bong Lim; Shujun Zhang; Thomas R. Shrout

doi:10.1080/01411594.2010.521433

Modified relaxor-PbTiO₃ piezoelectrics for high temperature applications

Jong Bong Lim, Shujun Zhang, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this study, Pb_1-x(Yb_1/2Nb_1/2) _0.515Ti_0.485O₃-x{(2SrO + BaO)/3} [PYNT-SBx] compositions with x = 0.00-0.05 at the rhombohedral side near the morphotropic phase boundary were investigated. The SB substitution for Pb2+ in PYNT was found to increase the tetragonality, but greatly reduce the Curie temperature (T _c) and broaden the dielectric permittivity maximum. The temperature dependence of the relative permittivity follows a Curie-Weiss law above the deviation temperature (T_D) at high temperatures for the SB-doped PYNT. The optimized properties with a piezoelectric coefficient of 610 pm V-1, maximum dielectric constant (ε_max) of 25,000 (at the T _c = 315°C and 1 kHz), and a remnant polarization (P_r) of 33 μC cm^-2 were obtained in PYNT-SB0.04 ceramics.

Original language	English (US)
Pages (from-to)	95-102
Number of pages	8
Journal	Phase Transitions
Volume	84
Issue number	2
DOIs	https://doi.org/10.1080/01411594.2010.521433
State	Published - Feb 1 2011

All Science Journal Classification (ASJC) codes

Instrumentation
Materials Science(all)

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10.1080/01411594.2010.521433

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title = "Modified relaxor-PbTiO3 piezoelectrics for high temperature applications",

abstract = "In this study, Pb1-x(Yb1/2Nb1/2) 0.515Ti0.485O3-x{(2SrO + BaO)/3} [PYNT-SBx] compositions with x = 0.00-0.05 at the rhombohedral side near the morphotropic phase boundary were investigated. The SB substitution for Pb2+ in PYNT was found to increase the tetragonality, but greatly reduce the Curie temperature (T c) and broaden the dielectric permittivity maximum. The temperature dependence of the relative permittivity follows a Curie-Weiss law above the deviation temperature (TD) at high temperatures for the SB-doped PYNT. The optimized properties with a piezoelectric coefficient of 610 pm V-1, maximum dielectric constant (εmax) of 25,000 (at the T c = 315°C and 1 kHz), and a remnant polarization (Pr) of 33 μC cm-2 were obtained in PYNT-SB0.04 ceramics.",

author = "Lim, {Jong Bong} and Shujun Zhang and Shrout, {Thomas R.}",

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AU - Lim, Jong Bong

AU - Zhang, Shujun

AU - Shrout, Thomas R.

PY - 2011/2/1

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N2 - In this study, Pb1-x(Yb1/2Nb1/2) 0.515Ti0.485O3-x{(2SrO + BaO)/3} [PYNT-SBx] compositions with x = 0.00-0.05 at the rhombohedral side near the morphotropic phase boundary were investigated. The SB substitution for Pb2+ in PYNT was found to increase the tetragonality, but greatly reduce the Curie temperature (T c) and broaden the dielectric permittivity maximum. The temperature dependence of the relative permittivity follows a Curie-Weiss law above the deviation temperature (TD) at high temperatures for the SB-doped PYNT. The optimized properties with a piezoelectric coefficient of 610 pm V-1, maximum dielectric constant (εmax) of 25,000 (at the T c = 315°C and 1 kHz), and a remnant polarization (Pr) of 33 μC cm-2 were obtained in PYNT-SB0.04 ceramics.

AB - In this study, Pb1-x(Yb1/2Nb1/2) 0.515Ti0.485O3-x{(2SrO + BaO)/3} [PYNT-SBx] compositions with x = 0.00-0.05 at the rhombohedral side near the morphotropic phase boundary were investigated. The SB substitution for Pb2+ in PYNT was found to increase the tetragonality, but greatly reduce the Curie temperature (T c) and broaden the dielectric permittivity maximum. The temperature dependence of the relative permittivity follows a Curie-Weiss law above the deviation temperature (TD) at high temperatures for the SB-doped PYNT. The optimized properties with a piezoelectric coefficient of 610 pm V-1, maximum dielectric constant (εmax) of 25,000 (at the T c = 315°C and 1 kHz), and a remnant polarization (Pr) of 33 μC cm-2 were obtained in PYNT-SB0.04 ceramics.

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Modified relaxor-PbTiO₃ piezoelectrics for high temperature applications

Abstract

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