Modulation of rectifying behaviour by oxygen contents in La 0.5Sr0.5CoO3-δ/0.7 wt% Nb-doped SrTiO3 heterojunctions

G. Li, Y. P. Yao, Ying Hou, T. F. Zhou, X. G. Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Heterojunctions composed of La0.5Sr0.5CoO 3-δ and 0.7 wt% Nb-doped SrTiO3 were deposited at different oxygen partial pressures and display opposite rectifying shapes: the junctions fabricated at a lower oxygen pressure show a backward shape and they gradually display a forward shape by tuning up the oxygen partial pressures. The former tends to form degenerate p-n junctions due to oxygen deficiency, which is responsible for the backward rectifying shape. The latter, however, can be viewed as a Schottky-type diode. The oxygen contents for the junctions can be estimated from their x-ray diffraction patterns, and are also confirmed from their resistance and magnetization measurements.

Original languageEnglish (US)
Article number065006
JournalJournal of Physics D: Applied Physics
Volume42
Issue number6
DOIs
StatePublished - Apr 8 2009

Fingerprint

Heterojunctions
heterojunctions
Modulation
Oxygen
modulation
oxygen
partial pressure
Partial pressure
hypoxia
p-n junctions
x ray diffraction
diffraction patterns
diodes
Diffraction patterns
tuning
Magnetization
Diodes
magnetization
Tuning
strontium titanium oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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title = "Modulation of rectifying behaviour by oxygen contents in La 0.5Sr0.5CoO3-δ/0.7 wt{\%} Nb-doped SrTiO3 heterojunctions",
abstract = "Heterojunctions composed of La0.5Sr0.5CoO 3-δ and 0.7 wt{\%} Nb-doped SrTiO3 were deposited at different oxygen partial pressures and display opposite rectifying shapes: the junctions fabricated at a lower oxygen pressure show a backward shape and they gradually display a forward shape by tuning up the oxygen partial pressures. The former tends to form degenerate p-n junctions due to oxygen deficiency, which is responsible for the backward rectifying shape. The latter, however, can be viewed as a Schottky-type diode. The oxygen contents for the junctions can be estimated from their x-ray diffraction patterns, and are also confirmed from their resistance and magnetization measurements.",
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Modulation of rectifying behaviour by oxygen contents in La 0.5Sr0.5CoO3-δ/0.7 wt% Nb-doped SrTiO3 heterojunctions. / Li, G.; Yao, Y. P.; Hou, Ying; Zhou, T. F.; Lee, X. G.

In: Journal of Physics D: Applied Physics, Vol. 42, No. 6, 065006, 08.04.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Modulation of rectifying behaviour by oxygen contents in La 0.5Sr0.5CoO3-δ/0.7 wt% Nb-doped SrTiO3 heterojunctions

AU - Li, G.

AU - Yao, Y. P.

AU - Hou, Ying

AU - Zhou, T. F.

AU - Lee, X. G.

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AB - Heterojunctions composed of La0.5Sr0.5CoO 3-δ and 0.7 wt% Nb-doped SrTiO3 were deposited at different oxygen partial pressures and display opposite rectifying shapes: the junctions fabricated at a lower oxygen pressure show a backward shape and they gradually display a forward shape by tuning up the oxygen partial pressures. The former tends to form degenerate p-n junctions due to oxygen deficiency, which is responsible for the backward rectifying shape. The latter, however, can be viewed as a Schottky-type diode. The oxygen contents for the junctions can be estimated from their x-ray diffraction patterns, and are also confirmed from their resistance and magnetization measurements.

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