Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films

P. Fisher, M. Skowronski, P. A. Salvador, M. Snyder, Jian Xu, Michael T. Lanagan, O. Maksimov, V. D. Heydemann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ba0.6Sr0.4TiO3 films were grown by molecular beam epitaxy on MgO(001) and LaAlO3(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba0.6Sr0.4TiO3 film grown on MgO were determined to be inferior to the film grown on LaAlO 3, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).

Original languageEnglish (US)
Title of host publicationFerroelectrics and Multiferroics
Pages134-139
Number of pages6
Volume966
StatePublished - Dec 1 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

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Molecular beams
Epitaxial growth
Reflection high energy electron diffraction
Rutherford backscattering spectroscopy
Dielectric losses
Molecular beam epitaxy
Dielectric properties
Spectrometry
Structural properties
X ray diffraction
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Fisher, P., Skowronski, M., Salvador, P. A., Snyder, M., Xu, J., Lanagan, M. T., ... Heydemann, V. D. (2006). Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films. In Ferroelectrics and Multiferroics (Vol. 966, pp. 134-139)
Fisher, P. ; Skowronski, M. ; Salvador, P. A. ; Snyder, M. ; Xu, Jian ; Lanagan, Michael T. ; Maksimov, O. ; Heydemann, V. D. / Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films. Ferroelectrics and Multiferroics. Vol. 966 2006. pp. 134-139
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Fisher, P, Skowronski, M, Salvador, PA, Snyder, M, Xu, J, Lanagan, MT, Maksimov, O & Heydemann, VD 2006, Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films. in Ferroelectrics and Multiferroics. vol. 966, pp. 134-139, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06.

Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films. / Fisher, P.; Skowronski, M.; Salvador, P. A.; Snyder, M.; Xu, Jian; Lanagan, Michael T.; Maksimov, O.; Heydemann, V. D.

Ferroelectrics and Multiferroics. Vol. 966 2006. p. 134-139.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Xu, Jian

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AB - Ba0.6Sr0.4TiO3 films were grown by molecular beam epitaxy on MgO(001) and LaAlO3(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba0.6Sr0.4TiO3 film grown on MgO were determined to be inferior to the film grown on LaAlO 3, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).

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Fisher P, Skowronski M, Salvador PA, Snyder M, Xu J, Lanagan MT et al. Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films. In Ferroelectrics and Multiferroics. Vol. 966. 2006. p. 134-139