Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films

P. Fisher, M. Skowronski, P. A. Salvador, M. Snyder, J. Xu, M. Lanagan, O. Maksimov, V. D. Heydemann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Ba0.6Sr0.4TiO3 films were grown by molecular beam epitaxy on MgO(001) and LaAlO3(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba0.6Sr0.4TiO3 film grown on MgO were determined to be inferior to the film grown on LaAlO 3, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).

Original languageEnglish (US)
Title of host publicationFerroelectrics and Multiferroics
Pages134-139
Number of pages6
StatePublished - Dec 1 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume966
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Fisher, P., Skowronski, M., Salvador, P. A., Snyder, M., Xu, J., Lanagan, M., Maksimov, O., & Heydemann, V. D. (2006). Molecular beam epitaxial growth and dielectric characterization of Ba 0.6Sr0.4TiO3 films. In Ferroelectrics and Multiferroics (pp. 134-139). (Materials Research Society Symposium Proceedings; Vol. 966).