Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe

H. Luo, N. Samarth, F. C. Zhang, A. Pareek, M. Dobrowolska, J. K. Furdyna, K. Mahalingam, N. Otsuka, W. C. Chou, A. Petrou, S. B. Qadri

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Abstract

We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.

Original languageEnglish (US)
Pages (from-to)1783-1785
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number16
DOIs
StatePublished - 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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