We report the epitaxial growth of CdSe, Zn1-x Cd x Se (0 ≤x ≤ 1) and Cd1-x Mn x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1-x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry