Molecular beam epitaxy of CdSe and the derivative alloys Zn1-x Cd x Se and Cd1-x M x Se

N. Samarth, H. Luo, J. K. Furdyna, S. B. Qadri, Y. R. Lee, A. K. Ramdas, N. Otsuka

Research output: Contribution to journalArticle

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Abstract

We report the epitaxial growth of CdSe, Zn1-x Cd x Se (0 ≤x ≤ 1) and Cd1-x Mn x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1-x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible.

Original languageEnglish (US)
Pages (from-to)543-547
Number of pages5
JournalJournal of Electronic Materials
Volume19
Issue number6
DOIs
StatePublished - Jun 1 1990

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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