Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures

J. J. Berry, S. H. Chun, K. C. Ku, N. Samarth, I. Malajovich, D. D. Awschalom

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the (1̄101) MnAs and (001) ZnSe planes are parallel. Single-phase type-B αMnAs/ZnSe heterostructures yield magnetic properties comparable to those reported in the literature for MnAs/GaAs heterostructures. Variations in growth conditions also permit the stabilization of a strained, nonferromagnetic phase that can coexist with the ferromagnetic phase even at room temperature.

Original languageEnglish (US)
Pages (from-to)3812-3814
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number23
DOIs
StatePublished - Dec 4 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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