TY - JOUR
T1 - Molecular beam epitaxy of Sm 2O 3, Dy 2O 3, and Ho 2O 3 on Si (111)
AU - Craft, H. S.
AU - Collazo, R.
AU - Sitar, Z.
AU - Maria, J. P.
N1 - Funding Information:
The authors gratefully acknowledge The Semiconductor Research Corporation for supporting this research. The authors would also like to thank Dr. G. Lucovsky of NCSU for useful technical discussions.
PY - 2006/7
Y1 - 2006/7
N2 - We report on the epitaxial deposition of Sm 2O 3, Dy 2O 3, and Ho 2O 3 films on Si (111) substrates as progress towards developing a predictive model for gate oxide selection. To date, films have been characterized by reflection high-energy electron diffraction, x-ray diffraction (XRD), and x-ray photoemission spectroscopy (XPS). In the case of Sm 2O 3, difficulty was encountered in achieving the growth of phase pure films; growth of the desired bixbyite oxide phase was accompanied by significant amounts of monoclinic oxide as detected by XRD. Dy 2O 3 and Ho 2O 3 films can be produced free of unwanted phases when deposited using a background pressure of 1 × 10 -6 torr O 2/O 3 and a substrate temperature between 425 and 550°C. Dy 2O 3 films with an x-ray peak width of 0.6° in ω were obtained. XPS studies of the Dy 2O 3/Si interface are in progress, and verify the phase purity of the films.
AB - We report on the epitaxial deposition of Sm 2O 3, Dy 2O 3, and Ho 2O 3 films on Si (111) substrates as progress towards developing a predictive model for gate oxide selection. To date, films have been characterized by reflection high-energy electron diffraction, x-ray diffraction (XRD), and x-ray photoemission spectroscopy (XPS). In the case of Sm 2O 3, difficulty was encountered in achieving the growth of phase pure films; growth of the desired bixbyite oxide phase was accompanied by significant amounts of monoclinic oxide as detected by XRD. Dy 2O 3 and Ho 2O 3 films can be produced free of unwanted phases when deposited using a background pressure of 1 × 10 -6 torr O 2/O 3 and a substrate temperature between 425 and 550°C. Dy 2O 3 films with an x-ray peak width of 0.6° in ω were obtained. XPS studies of the Dy 2O 3/Si interface are in progress, and verify the phase purity of the films.
UR - http://www.scopus.com/inward/record.url?scp=33746519210&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746519210&partnerID=8YFLogxK
U2 - 10.1116/1.2216721
DO - 10.1116/1.2216721
M3 - Article
AN - SCOPUS:33746519210
VL - 24
SP - 2105
EP - 2110
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
ER -