We report on the epitaxial deposition of Sm 2O 3, Dy 2O 3, and Ho 2O 3 films on Si (111) substrates as progress towards developing a predictive model for gate oxide selection. To date, films have been characterized by reflection high-energy electron diffraction, x-ray diffraction (XRD), and x-ray photoemission spectroscopy (XPS). In the case of Sm 2O 3, difficulty was encountered in achieving the growth of phase pure films; growth of the desired bixbyite oxide phase was accompanied by significant amounts of monoclinic oxide as detected by XRD. Dy 2O 3 and Ho 2O 3 films can be produced free of unwanted phases when deposited using a background pressure of 1 × 10 -6 torr O 2/O 3 and a substrate temperature between 425 and 550°C. Dy 2O 3 films with an x-ray peak width of 0.6° in ω were obtained. XPS studies of the Dy 2O 3/Si interface are in progress, and verify the phase purity of the films.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 2006|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering