Molecular doping control at a topological insulator surface: F 4-TCNQ on Bi2Se3

J. Wang, A. S. Hewitt, R. Kumar, J. Boltersdorf, T. Guan, F. Hunte, P. A. Maggard, J. E. Brom, J. M. Redwing, D. B. Dougherty

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Abstract

Recent electrical measurements have accessed transport in the topological surface state band of thin exfoliated samples of Bi2Se3 by removing the bulk n-type doping by contact with thin films of the molecular acceptor F4-TCNQ. Here we report on the film growth and interfacial electronic characterization of F4-TCNQ grown on Bi2Se 3. Atomic force microscopy shows wetting layer formation followed by 3D island growth. X-ray photoelectron spectroscopy is consistent with this picture and also shows that charge transferred to the molecular layer is localized on nitrogen atoms. Ultraviolet photoelectron spectroscopy shows a work function increase and an upward shift of the valence band edge that suggest significant reduction in carrier density at the Bi2Se3 surface.

Original languageEnglish (US)
Pages (from-to)14860-14865
Number of pages6
JournalJournal of Physical Chemistry C
Volume118
Issue number27
DOIs
StatePublished - Jul 10 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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    Wang, J., Hewitt, A. S., Kumar, R., Boltersdorf, J., Guan, T., Hunte, F., Maggard, P. A., Brom, J. E., Redwing, J. M., & Dougherty, D. B. (2014). Molecular doping control at a topological insulator surface: F 4-TCNQ on Bi2Se3. Journal of Physical Chemistry C, 118(27), 14860-14865. https://doi.org/10.1021/jp412690h