We provide long sought direct atomic scale evidence for molecular hydrogen reactions at a specific point defect in irradiated thermally grown SiO2 films on Si. Using electron spin resonance (ESR), we observe hydrogen interaction at E’ centers in thermal oxides exposed to molecular hydrogen at room temperature. (The E’ center is the dominant hole trap in thermally grown SiO2.) The decrease in E’ density occurs on a time scale similar to a comparable increase in density of interface traps. The similarity of the rate of E’ decrease to the rate of interface trap increase and the approximate agreement between the number of E’ centers and interface traps involved in the two reactions is very strong evidence that E’ centers are involved in the interface trap formation process in radiation and hot carrier damaged thermally grown SiO2 on Si.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering