Molecular Hydrogen, E’ Center Hole Traps, and Radiation Induced Interface Traps in MOS Devices

J. F. Conley, P. M. Lenahan

Research output: Contribution to journalArticlepeer-review

61 Scopus citations

Abstract

We provide long sought direct atomic scale evidence for molecular hydrogen reactions at a specific point defect in irradiated thermally grown SiO2 films on Si. Using electron spin resonance (ESR), we observe hydrogen interaction at E’ centers in thermal oxides exposed to molecular hydrogen at room temperature. (The E’ center is the dominant hole trap in thermally grown SiO2.) The decrease in E’ density occurs on a time scale similar to a comparable increase in density of interface traps. The similarity of the rate of E’ decrease to the rate of interface trap increase and the approximate agreement between the number of E’ centers and interface traps involved in the two reactions is very strong evidence that E’ centers are involved in the interface trap formation process in radiation and hot carrier damaged thermally grown SiO2 on Si.

Original languageEnglish (US)
Pages (from-to)1335-1340
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume40
Issue number6
DOIs
StatePublished - Dec 1993

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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