Monitoring of chemical oxide removal from silicon surfaces using a surface photovoltage technique

M. Brubaker, P. Roman, J. Staffa, J. Ruzyllo

Research output: Contribution to journalArticle

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Abstract

The goal of this study was to develop a method for in-line real-time monitoring of chemical oxide removal in integrated processes requiring an oxide etching step. Specifically, the surface photovoltage technique based noncontact surface charge profiling (SCP) method was investigated. The surface recombination lifetime measured by SCP is sensitive to the presence of chemical oxide on the surface formed in ammonia-hydrogen peroxide-water (APM) and sulfuric acid-hydrogen peroxide-water (SPM) solutions, but not in hydrochloric acid-hydrogen peroxide-water (HPM) solution. It is suggested that the recombination centers are most likely associated with interfacial bonding defects and iron contamination in APM chemical oxides and with oxidized sulfur in SPM chemical oxides.

Original languageEnglish (US)
Pages (from-to)130-132
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume1
Issue number3
Publication statusPublished - Sep 1 1998

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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