Monitoring of HF/H 2 O treated silicon surfaces using non-contact surface charge measurements

P. Roman, D. Hwang, K. Torek, Jerzy Ruzyllo, E. Kamieniecki

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

In this work, a new commercial system allowing non-contact measurement of the surface charge is used to monitor the condition of the silicon surface following HF/water etch. Results obtained demonstrate that by monitoring changes of surface charge using this system, a truly non-invasive, instant and easy to carry out characterization of Si surfaces after HF/water etch can be accomplished. The results show that HF/water exposure adds positive charge to the silicon surface. Change in the surface charge, considered to be indicative of the change in the electro-chemical condition of the surface, appears to precede initiation of the oxide etching process, and is proposed to be a factor in initiating etching reactions that involve mainly negatively charged species.

Original languageEnglish (US)
Pages (from-to)401-406
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume386
StatePublished - Dec 1 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

Fingerprint

Silicon
Surface charge
Monitoring
silicon
Water
Etching
Oxides
etching
water
oxides

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Roman, P. ; Hwang, D. ; Torek, K. ; Ruzyllo, Jerzy ; Kamieniecki, E. / Monitoring of HF/H 2 O treated silicon surfaces using non-contact surface charge measurements In: Materials Research Society Symposium - Proceedings. 1995 ; Vol. 386. pp. 401-406.
@article{e13dc0b8670d4af697ef60b959861726,
title = "Monitoring of HF/H 2 O treated silicon surfaces using non-contact surface charge measurements",
abstract = "In this work, a new commercial system allowing non-contact measurement of the surface charge is used to monitor the condition of the silicon surface following HF/water etch. Results obtained demonstrate that by monitoring changes of surface charge using this system, a truly non-invasive, instant and easy to carry out characterization of Si surfaces after HF/water etch can be accomplished. The results show that HF/water exposure adds positive charge to the silicon surface. Change in the surface charge, considered to be indicative of the change in the electro-chemical condition of the surface, appears to precede initiation of the oxide etching process, and is proposed to be a factor in initiating etching reactions that involve mainly negatively charged species.",
author = "P. Roman and D. Hwang and K. Torek and Jerzy Ruzyllo and E. Kamieniecki",
year = "1995",
month = "12",
day = "1",
language = "English (US)",
volume = "386",
pages = "401--406",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Monitoring of HF/H 2 O treated silicon surfaces using non-contact surface charge measurements . / Roman, P.; Hwang, D.; Torek, K.; Ruzyllo, Jerzy; Kamieniecki, E.

In: Materials Research Society Symposium - Proceedings, Vol. 386, 01.12.1995, p. 401-406.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Monitoring of HF/H 2 O treated silicon surfaces using non-contact surface charge measurements

AU - Roman, P.

AU - Hwang, D.

AU - Torek, K.

AU - Ruzyllo, Jerzy

AU - Kamieniecki, E.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - In this work, a new commercial system allowing non-contact measurement of the surface charge is used to monitor the condition of the silicon surface following HF/water etch. Results obtained demonstrate that by monitoring changes of surface charge using this system, a truly non-invasive, instant and easy to carry out characterization of Si surfaces after HF/water etch can be accomplished. The results show that HF/water exposure adds positive charge to the silicon surface. Change in the surface charge, considered to be indicative of the change in the electro-chemical condition of the surface, appears to precede initiation of the oxide etching process, and is proposed to be a factor in initiating etching reactions that involve mainly negatively charged species.

AB - In this work, a new commercial system allowing non-contact measurement of the surface charge is used to monitor the condition of the silicon surface following HF/water etch. Results obtained demonstrate that by monitoring changes of surface charge using this system, a truly non-invasive, instant and easy to carry out characterization of Si surfaces after HF/water etch can be accomplished. The results show that HF/water exposure adds positive charge to the silicon surface. Change in the surface charge, considered to be indicative of the change in the electro-chemical condition of the surface, appears to precede initiation of the oxide etching process, and is proposed to be a factor in initiating etching reactions that involve mainly negatively charged species.

UR - http://www.scopus.com/inward/record.url?scp=0029505212&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029505212&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029505212

VL - 386

SP - 401

EP - 406

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -