@inproceedings{8d5f10425bdb43688a8cd3703b0bf9c5,
title = "Monitoring of semiconductor surfaces using photoconductance decay (PCD) method",
abstract = "This experiment is concerned with photoconductive decay (PCD) measurements devised specifically for the purpose of characterization of the near-surface region of semiconductor substrates. The method was tested through the measurements of the germanium wafers for which the surface was roughened in a controlled fashion, and multi-crystalline silicon wafers with textured surfaces. The near-surface lifetime of minority carriers and carrier mobility were reduced as the Ge surface roughness increased, and increased for mc-Si as saw damage was removed by chemical treatment. These results demonstrate a direct correlation between condition of the semiconductor surface and the electrical parameters measured. It is postulated that the PCD method using temporary contact can be effectively used to monitor the condition of semiconductor surfaces during device processing.",
author = "P. Drummond and S. Ramani and J. Ruzyllo",
year = "2009",
month = dec,
day = "1",
doi = "10.1149/1.3202674",
language = "English (US)",
isbn = "9781566777421",
series = "ECS Transactions",
number = "5",
pages = "361--366",
booktitle = "ECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11",
edition = "5",
note = "11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",
}