Monitoring of semiconductor surfaces using photoconductance decay (PCD) method

P. Drummond, S. Ramani, Jerzy Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

This experiment is concerned with photoconductive decay (PCD) measurements devised specifically for the purpose of characterization of the near-surface region of semiconductor substrates. The method was tested through the measurements of the germanium wafers for which the surface was roughened in a controlled fashion, and multi-crystalline silicon wafers with textured surfaces. The near-surface lifetime of minority carriers and carrier mobility were reduced as the Ge surface roughness increased, and increased for mc-Si as saw damage was removed by chemical treatment. These results demonstrate a direct correlation between condition of the semiconductor surface and the electrical parameters measured. It is postulated that the PCD method using temporary contact can be effectively used to monitor the condition of semiconductor surfaces during device processing.

Original languageEnglish (US)
Title of host publicationECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
Pages361-366
Number of pages6
Volume25
Edition5
DOIs
StatePublished - Dec 1 2009
Event11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Other

Other11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting
CountryAustria
CityVienna
Period10/4/0910/9/09

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Drummond, P., Ramani, S., & Ruzyllo, J. (2009). Monitoring of semiconductor surfaces using photoconductance decay (PCD) method. In ECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11 (5 ed., Vol. 25, pp. 361-366) https://doi.org/10.1149/1.3202674