Monolithic 3D enabled processing-in-SRAM memory

Vijaykrishnan Narayanan, Nagadastagiri Challapalle, Ikenna Okafor, Srivatsa Srinivasa, Nicholas Jao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work will provide an overview of recent advances in enabling SRAM-based compute fabrics leveraging monolithic 3D (M3D). It will highlight that the fine grain connectivity enabled by M3D, enables to embed computations close to the memory cells significantly reducing the data transfer costs. The application level benefits to emerging workloads will also be presented.

Original languageEnglish (US)
Title of host publicationChina Semiconductor Technology International Conference 2020, CSTIC 2020
EditorsCor Claeys, Steve Liang, Qinghuang Lin, Ru Huang, Hanming Wu, Peilin Song, Kafai Lai, Ying Zhang, Beichao Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728165585
DOIs
StatePublished - Jun 26 2020
Event2020 China Semiconductor Technology International Conference, CSTIC 2020 - Shanghai, China
Duration: Jun 26 2020Jul 17 2020

Publication series

NameChina Semiconductor Technology International Conference 2020, CSTIC 2020

Conference

Conference2020 China Semiconductor Technology International Conference, CSTIC 2020
CountryChina
CityShanghai
Period6/26/207/17/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Monolithic 3D enabled processing-in-SRAM memory'. Together they form a unique fingerprint.

Cite this