Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes

Jian Xu, Jie Liu, Li Wang, Zhenyu Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Integration of III-nitride light emitting diodes (LEDs) and Schottky barrier diodes (SBDs) have been proposed for various applications, such as electrostatic discharge (ESD) protection and alternating current-LEDs (AC-LEDs) with on-chip bridge rectifiers. Nevertheless, it is generally perceived that the dry etching-induced nitrogen vacancies in GaN lattice render a high surface concentration of defect donors, and lead to poor SBD performance in terms of high saturation current and very low breakdown voltage.

Original languageEnglish (US)
Title of host publication2015 IEEE Photonics Conference, IPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages51-52
Number of pages2
ISBN (Electronic)9781479974658
DOIs
StatePublished - Nov 9 2015
EventIEEE Photonics Conference, IPC 2015 - Reston, United States
Duration: Aug 30 2015Aug 31 2015

Publication series

Name2015 IEEE Photonics Conference, IPC 2015

Other

OtherIEEE Photonics Conference, IPC 2015
CountryUnited States
CityReston
Period8/30/158/31/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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