Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication

Zhenyu Jiang, Mahmoud R.M. Atalla, Guanjun You, Li Wang, Xiaoyun Li, Jie Liu, Asim M. Elahi, Lai Wei, Jian Xu

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Design and fabrication of monolithically integrated III-nitride visible light-emitting-diodes (LEDs) and ultraviolet Schottky barrier-photodetectors (SB-PDs) have been proposed and demonstrated. Responsivity up to 0.2 AW-1 at 365 nm for GaN SB-PDs has been achieved. It is shown that those UV SB-PDs were capable of sensitive UV light detection down to 7.16 × 10-4 W/cm2 at 365 nm, whereas simultaneous operation of on-chip blue LEDs has produced negligible crosstalk at practical illumination brightness. Monolithically integrated LEDs and SB-PDs can function as transmitters to emit visible light signals, and as receivers to analyze incoming UV signals, respectively; this offers the potential of using such devices for bi-directional optical wireless communication applications.

Original languageEnglish (US)
Pages (from-to)5657-5660
Number of pages4
JournalOptics Letters
Volume39
Issue number19
DOIs
StatePublished - Oct 1 2014

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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