Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver

Pallab Bhattacharya, Jian Xu, Gyorgy Váró, Duane L. Marcy, Robert R. Birge

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We have applied the large photovoltage developed across a layer of selectively deposited bacteriorhodopsin to the gate terminal of a monolithically integrated GaAs-based modulation-doped field-effect transistor, which delivers an amplified photoinduced current signal. The integrated biophotoreceiver device exhibits a responsivity of 3.8 A/W. The optoelectronic integrated circuit is achieved by molecular-beam epitaxy of the field-effect transistor's heterostructure, photolithography, and selective-area bacteriorhodopsin electrodeposition.

Original languageEnglish (US)
Pages (from-to)839-841
Number of pages3
JournalOptics Letters
Volume27
Issue number10
DOIs
StatePublished - May 15 2002

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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