TY - JOUR
T1 - Monomorph characteristics of semiconductive piezoceramics
AU - Uchino, Kenji
AU - Yoshizaki, Mikihiko
AU - Nagao, Atsushi
PY - 1987/1
Y1 - 1987/1
N2 - New type piezoelectric bending actuators, monomorphs, originate basically from a metal- semiconductor contact (Schottky barrier) effect. This paper deals with a more sophisticated model, Metal-Insulator-Semiconductor (MIS) structure, to explain detailed monomorph characteristics. Furthermore, voltage versus current relation was measured on the actuator sample to obtain better understanding on the monomorph. The electric charge flow during half a voltage cycle is of the order of 2.6 C/m2, which is several times larger than the usual charge flow associated with the polarization reversal.
AB - New type piezoelectric bending actuators, monomorphs, originate basically from a metal- semiconductor contact (Schottky barrier) effect. This paper deals with a more sophisticated model, Metal-Insulator-Semiconductor (MIS) structure, to explain detailed monomorph characteristics. Furthermore, voltage versus current relation was measured on the actuator sample to obtain better understanding on the monomorph. The electric charge flow during half a voltage cycle is of the order of 2.6 C/m2, which is several times larger than the usual charge flow associated with the polarization reversal.
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U2 - 10.7567/JJAPS.26S2.201
DO - 10.7567/JJAPS.26S2.201
M3 - Article
AN - SCOPUS:0042145079
VL - 26
SP - 201
EP - 203
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
ER -