Monomorph characteristics of semiconductive piezoceramics

Kenji Uchino, Mikihiko Yoshizaki, Atsushi Nagao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

New type piezoelectric bending actuators, monomorphs, originate basically from a metal- semiconductor contact (Schottky barrier) effect. This paper deals with a more sophisticated model, Metal-Insulator-Semiconductor (MIS) structure, to explain detailed monomorph characteristics. Furthermore, voltage versus current relation was measured on the actuator sample to obtain better understanding on the monomorph. The electric charge flow during half a voltage cycle is of the order of 2.6 C/m2, which is several times larger than the usual charge flow associated with the polarization reversal.

Original languageEnglish (US)
Pages (from-to)201-203
Number of pages3
JournalJapanese Journal of Applied Physics
Volume26
DOIs
StatePublished - Jan 1 1987

Fingerprint

Actuators
actuators
Semiconductor materials
Electric charge
Electric potential
electric potential
MIS (semiconductors)
electric charge
Metals
Polarization
cycles
polarization
metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Uchino, Kenji ; Yoshizaki, Mikihiko ; Nagao, Atsushi. / Monomorph characteristics of semiconductive piezoceramics. In: Japanese Journal of Applied Physics. 1987 ; Vol. 26. pp. 201-203.
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Monomorph characteristics of semiconductive piezoceramics. / Uchino, Kenji; Yoshizaki, Mikihiko; Nagao, Atsushi.

In: Japanese Journal of Applied Physics, Vol. 26, 01.01.1987, p. 201-203.

Research output: Contribution to journalArticle

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