Morphology of nickel and nickel/gold contacts to gallium nitride

H. S. Venugopalan, S. E. Mohney, J. M. DeLucca, B. P. Luther, G. E. Bulman

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Changes in film morphology upon annealing Ni and Ni/Au contacts to GaN were examined using scanning electron microscopy and atomic force microscopy. Atomic force microscopy was performed on the GaN surface that was exposed by etching away the metal film. This technique was demonstrated to be a convenient and effective way to evaluate the morphology of the contact/ semiconductor interface, rapidly providing spatial information in three dimensions. Metal island formation and a corresponding deep, nonuniform metal penetration into GaN were observed after annealing Ni/GaN and Au/Ni/GaN contacts above 800 and 700°C, respectively.

Original languageEnglish (US)
Pages (from-to)607-610
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number2
DOIs
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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