MOVPE GaN gas-phase chemistry for reactor design and optimization

S. A. Safvi, Joan Marie Redwing, A. Thon, J. S. Flynn, M. A. Tischler, T. F. Kuech

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The results of gas phase decomposition studies are used to construct a chemistry model which is compared to data obtained from an experimental MOVPE reactor. A flow tube reactor is used to study gas phase reactions between trimethylgallium (TMG) and ammonia at high temperatures, characteristic to the metallorganic vapor phase epitaxy (MOVPE) of GaN. Experiments were performed to determine the effect of the mixing of the Group III precursors and Group V precursors on the growth rate, growth uniformity and film properties. Growth rates are predicted for simple reaction mechanisms and compared to those obtained experimentally. Quantification of the loss of reacting species due to oligomerization is made based on experimentally observed growth rates. The model is used to obtain trends in growth rate and uniformity with the purpose of moving towards better operating conditions.

Original languageEnglish (US)
Pages (from-to)101-106
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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