Multi-Bit Read and Write Methodologies for Diode-MTJ Crossbar Array

Mohammad Nasim Imtiaz Khan, Swaroop Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crossbar arrays using emerging Non-Volatile Memory (NVM) technologies offer high density, fast access speed and low-power. However, the bandwidth of the crossbar is limited to single-bit read/write per access to avoid the selection of undesirable bits. In this work, we propose a technique to perform multi-bit read and write in a diode-MTJ (Magnetic Tunnel Junction) crossbar array. The simulation shows that the biasing voltage of half-selected cells can be adjusted to improve the sense margin during read which in turn, reduces the sneak path through the half-selected cells. Results indicate biasing the half-selected cells by 700mV can enable reading as much as 512bits while sustaining 512×512 crossbar with 2.04 years retention. During write operation, the half-selected cells are biased with a pulse voltage source in addition to V/2 scheme which increases the write latency of these cells and enables writing 2 bits while keeping the half-selected bits undisturbed. The 2bit writing requires pulsing by 50mV to optimize energy.

Original languageEnglish (US)
Title of host publicationProceedings of the 21st International Symposium on Quality Electronic Design, ISQED 2020
PublisherIEEE Computer Society
Pages93-98
Number of pages6
ISBN (Electronic)9781728142074
DOIs
StatePublished - Mar 2020
Event21st International Symposium on Quality Electronic Design, ISQED 2020 - Santa Clara, United States
Duration: Mar 25 2020Mar 26 2020

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2020-March
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference21st International Symposium on Quality Electronic Design, ISQED 2020
CountryUnited States
CitySanta Clara
Period3/25/203/26/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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