Multi-gate modulation doped In0.7Ga0.3As quantum well FET for ultra low power digital logic

L. Liu, V. Saripalli, E. Hwang, V. Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Multi-gate modulation doped In0.7Ga0.3As quantum well FETs (MuQFETs) are simulated, fabricated and analyzed in detail. The devices operate in both classical and non-classical quantum regime. Due to its robust electrostatics, its excellent channel transport properties and its versatile classical and quantum mode operation capability, In0.7Ga 0.3As MuQFET is promising device architecture for future ultra low power information processing applications.

Original languageEnglish (US)
Title of host publicationDielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Pages311-317
Number of pages7
Edition3
DOIs
StatePublished - Aug 1 2011
EventGraphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 2 2011May 4 2011

Publication series

NameECS Transactions
Number3
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherGraphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period5/2/115/4/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Liu, L., Saripalli, V., Hwang, E., Narayanan, V., & Datta, S. (2011). Multi-gate modulation doped In0.7Ga0.3As quantum well FET for ultra low power digital logic. In Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 (3 ed., pp. 311-317). (ECS Transactions; Vol. 35, No. 3). https://doi.org/10.1149/1.3569923