Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Weiming Lü, Changjian Li, Limei Zheng, Juanxiu Xiao, Weinan Lin, Qiang Li, Xiao Renshaw Wang, Zhen Huang, Shengwei Zeng, Kun Han, Wenxiong Zhou, Kaiyang Zeng, Jingsheng Chen, Ariando, Wenwu Cao, Thirumalai Venkatesan

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO3 FTJ by comparing BaTiO3 with SrTiO3 based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO3 switching voltage, showing OVM being its origin. BaTiO3 based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.

Original languageEnglish (US)
Article number1606165
JournalAdvanced Materials
Volume29
Issue number24
DOIs
StatePublished - Jun 27 2017

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Ferroelectricity
Oxygen vacancies
Ferroelectric materials
Tunnel junctions
Data storage equipment
Electric potential
Oxide films
Heterojunctions
Polarization
Electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lü, Weiming ; Li, Changjian ; Zheng, Limei ; Xiao, Juanxiu ; Lin, Weinan ; Li, Qiang ; Wang, Xiao Renshaw ; Huang, Zhen ; Zeng, Shengwei ; Han, Kun ; Zhou, Wenxiong ; Zeng, Kaiyang ; Chen, Jingsheng ; Ariando, ; Cao, Wenwu ; Venkatesan, Thirumalai. / Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration. In: Advanced Materials. 2017 ; Vol. 29, No. 24.
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abstract = "Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO3 FTJ by comparing BaTiO3 with SrTiO3 based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO3 switching voltage, showing OVM being its origin. BaTiO3 based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.",
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Lü, W, Li, C, Zheng, L, Xiao, J, Lin, W, Li, Q, Wang, XR, Huang, Z, Zeng, S, Han, K, Zhou, W, Zeng, K, Chen, J, Ariando, , Cao, W & Venkatesan, T 2017, 'Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration', Advanced Materials, vol. 29, no. 24, 1606165. https://doi.org/10.1002/adma.201606165

Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration. / Lü, Weiming; Li, Changjian; Zheng, Limei; Xiao, Juanxiu; Lin, Weinan; Li, Qiang; Wang, Xiao Renshaw; Huang, Zhen; Zeng, Shengwei; Han, Kun; Zhou, Wenxiong; Zeng, Kaiyang; Chen, Jingsheng; Ariando, ; Cao, Wenwu; Venkatesan, Thirumalai.

In: Advanced Materials, Vol. 29, No. 24, 1606165, 27.06.2017.

Research output: Contribution to journalArticle

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T1 - Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

AU - Lü, Weiming

AU - Li, Changjian

AU - Zheng, Limei

AU - Xiao, Juanxiu

AU - Lin, Weinan

AU - Li, Qiang

AU - Wang, Xiao Renshaw

AU - Huang, Zhen

AU - Zeng, Shengwei

AU - Han, Kun

AU - Zhou, Wenxiong

AU - Zeng, Kaiyang

AU - Chen, Jingsheng

AU - Ariando,

AU - Cao, Wenwu

AU - Venkatesan, Thirumalai

PY - 2017/6/27

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N2 - Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO3 FTJ by comparing BaTiO3 with SrTiO3 based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO3 switching voltage, showing OVM being its origin. BaTiO3 based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.

AB - Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO3 FTJ by comparing BaTiO3 with SrTiO3 based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO3 switching voltage, showing OVM being its origin. BaTiO3 based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.

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