Abstract
Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.
| Original language | English (US) |
|---|---|
| Article number | 153503 |
| Journal | Applied Physics Letters |
| Volume | 115 |
| Issue number | 15 |
| DOIs | |
| State | Published - Oct 7 2019 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor. / Lundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen; Baca, Albert G.; Kaplar, Robert J.; Beechem, Thomas E.; Allerman, Andrew A.; Armstrong, Andrew M.; Klein, Brianna A.; Bansal, Anushka; Talreja, Disha; Pogrebnyakov, Alexej; Heller, Eric; Gopalan, Venkatraman; Redwing, Joan M.; Foley, Brian M.; Choi, Sukwon.
In: Applied Physics Letters, Vol. 115, No. 15, 153503, 07.10.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
AU - Lundh, James Spencer
AU - Chatterjee, Bikramjit
AU - Song, Yiwen
AU - Baca, Albert G.
AU - Kaplar, Robert J.
AU - Beechem, Thomas E.
AU - Allerman, Andrew A.
AU - Armstrong, Andrew M.
AU - Klein, Brianna A.
AU - Bansal, Anushka
AU - Talreja, Disha
AU - Pogrebnyakov, Alexej
AU - Heller, Eric
AU - Gopalan, Venkatraman
AU - Redwing, Joan M.
AU - Foley, Brian M.
AU - Choi, Sukwon
PY - 2019/10/7
Y1 - 2019/10/7
N2 - Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.
AB - Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.
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U2 - 10.1063/1.5115013
DO - 10.1063/1.5115013
M3 - Article
AN - SCOPUS:85073353750
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 153503
ER -