Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

James Spencer Lundh, Bikramjit Chatterjee, Yiwen Song, Albert G. Baca, Robert J. Kaplar, Thomas E. Beechem, Andrew A. Allerman, Andrew M. Armstrong, Brianna A. Klein, Anushka Bansal, Disha Talreja, Alexej Pogrebnyakov, Eric Heller, Venkatraman Gopalan, Joan M. Redwing, Brian M. Foley, Sukwon Choi

Research output: Contribution to journalArticle

Abstract

Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.

Original languageEnglish (US)
Article number153503
JournalApplied Physics Letters
Volume115
Issue number15
DOIs
StatePublished - Oct 7 2019

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high electron mobility transistors
thermal analysis
gallium nitrides
aluminum nitrides
ternary alloys
operating temperature
temperature profiles
radio frequencies
thermal conductivity
Raman spectroscopy
heating
temperature
output
room temperature
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lundh, James Spencer ; Chatterjee, Bikramjit ; Song, Yiwen ; Baca, Albert G. ; Kaplar, Robert J. ; Beechem, Thomas E. ; Allerman, Andrew A. ; Armstrong, Andrew M. ; Klein, Brianna A. ; Bansal, Anushka ; Talreja, Disha ; Pogrebnyakov, Alexej ; Heller, Eric ; Gopalan, Venkatraman ; Redwing, Joan M. ; Foley, Brian M. ; Choi, Sukwon. / Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor. In: Applied Physics Letters. 2019 ; Vol. 115, No. 15.
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abstract = "Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1-xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1-xN may open the door for extreme temperature applications.",
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Lundh, JS, Chatterjee, B, Song, Y, Baca, AG, Kaplar, RJ, Beechem, TE, Allerman, AA, Armstrong, AM, Klein, BA, Bansal, A, Talreja, D, Pogrebnyakov, A, Heller, E, Gopalan, V, Redwing, JM, Foley, BM & Choi, S 2019, 'Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor', Applied Physics Letters, vol. 115, no. 15, 153503. https://doi.org/10.1063/1.5115013

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor. / Lundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen; Baca, Albert G.; Kaplar, Robert J.; Beechem, Thomas E.; Allerman, Andrew A.; Armstrong, Andrew M.; Klein, Brianna A.; Bansal, Anushka; Talreja, Disha; Pogrebnyakov, Alexej; Heller, Eric; Gopalan, Venkatraman; Redwing, Joan M.; Foley, Brian M.; Choi, Sukwon.

In: Applied Physics Letters, Vol. 115, No. 15, 153503, 07.10.2019.

Research output: Contribution to journalArticle

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AU - Song, Yiwen

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AU - Kaplar, Robert J.

AU - Beechem, Thomas E.

AU - Allerman, Andrew A.

AU - Armstrong, Andrew M.

AU - Klein, Brianna A.

AU - Bansal, Anushka

AU - Talreja, Disha

AU - Pogrebnyakov, Alexej

AU - Heller, Eric

AU - Gopalan, Venkatraman

AU - Redwing, Joan M.

AU - Foley, Brian M.

AU - Choi, Sukwon

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