Multiferroic tunnel junctions

Yue Wei Yin, Muralikrishna Raju, Wei Jin Hu, Xiao Jun Weng, Ke Zou, Jun Zhu, Xiao Guang Li, Zhi Dong Zhang, Qi Li

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Abstract

Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La 0.7Ca 0.3MnO 3 and La 0.7Sr 0.3MnO 3 as the electrodes and ferroelectric (Ba, Sr)TiO 3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO 3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.

Original languageEnglish (US)
Pages (from-to)380-385
Number of pages6
JournalFrontiers of Physics
Volume7
Issue number4
DOIs
StatePublished - Aug 1 2012

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yin, Y. W., Raju, M., Hu, W. J., Weng, X. J., Zou, K., Zhu, J., Li, X. G., Zhang, Z. D., & Li, Q. (2012). Multiferroic tunnel junctions. Frontiers of Physics, 7(4), 380-385. https://doi.org/10.1007/s11467-012-0266-8