Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

Y. W. Yin, M. Raju, W. J. Hu, J. D. Burton, Y. M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, A. Gruverman, X. G. Li, Z. D. Zhang, E. Y. Tsymbal, Qi Li

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

Original languageEnglish (US)
Article number172601
JournalJournal of Applied Physics
Volume117
Issue number17
DOIs
StatePublished - May 7 2015

Fingerprint

tunnel junctions
magnetic storage
polarization
data storage
semiconductor devices
logic
dissipation
insulators
scaling
electrodes
electric fields
room temperature
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yin, Y. W. ; Raju, M. ; Hu, W. J. ; Burton, J. D. ; Kim, Y. M. ; Borisevich, A. Y. ; Pennycook, S. J. ; Yang, S. M. ; Noh, T. W. ; Gruverman, A. ; Li, X. G. ; Zhang, Z. D. ; Tsymbal, E. Y. ; Li, Qi. / Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited). In: Journal of Applied Physics. 2015 ; Vol. 117, No. 17.
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Yin, YW, Raju, M, Hu, WJ, Burton, JD, Kim, YM, Borisevich, AY, Pennycook, SJ, Yang, SM, Noh, TW, Gruverman, A, Li, XG, Zhang, ZD, Tsymbal, EY & Li, Q 2015, 'Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)', Journal of Applied Physics, vol. 117, no. 17, 172601. https://doi.org/10.1063/1.4913753

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited). / Yin, Y. W.; Raju, M.; Hu, W. J.; Burton, J. D.; Kim, Y. M.; Borisevich, A. Y.; Pennycook, S. J.; Yang, S. M.; Noh, T. W.; Gruverman, A.; Li, X. G.; Zhang, Z. D.; Tsymbal, E. Y.; Li, Qi.

In: Journal of Applied Physics, Vol. 117, No. 17, 172601, 07.05.2015.

Research output: Contribution to journalArticle

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AU - Yin, Y. W.

AU - Raju, M.

AU - Hu, W. J.

AU - Burton, J. D.

AU - Kim, Y. M.

AU - Borisevich, A. Y.

AU - Pennycook, S. J.

AU - Yang, S. M.

AU - Noh, T. W.

AU - Gruverman, A.

AU - Li, X. G.

AU - Zhang, Z. D.

AU - Tsymbal, E. Y.

AU - Li, Qi

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N2 - As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

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