Multipoint Defect Synergy Realizing the Excellent Thermoelectric Performance of n-Type Polycrystalline SnSe via Re Doping

Zhen Hua Ge, Yang Qiu, Yue Xing Chen, Xiaoyu Chong, Jing Feng, Zi-kui Liu, Jiaqing He

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

SnSe has attracted much attention due to the excellent thermoelectric (TE) properties of both p- and n-type single crystals. However, the TE performance of polycrystalline SnSe is still low, especially in n-type materials, because SnSe is an intrinsic p-type semiconductor. In this work, a three-step doping process is employed on polycrystalline SnSe to make it n-type and enhance its TE properties. It is found that the Sn0.97Re0.03Se0.93Cl0.02 sample achieves a peak ZT value of ≈1.5 at 798 K, which is the highest ZT reported, to date, in n-type polycrystalline SnSe. This is attributed to the synergistic effects of a series of point defects: (Formula presented.). In those defects, the (Formula presented.) compensates for the intrinsic Sn vacancies in SnSe, the (Formula presented.) acts as a donor, the (Formula presented.) acts as an acceptor, all of which contribute to optimizing the carrier concentration. Rhenium (Re) doping surprisingly plays dual-roles, in that it both significantly enhances the electrical transport properties and largely reduces the thermal conductivity by introducing the point defects, (Formula presented.). The method paves the way for obtaining high-performance TE properties in SnSe crystals using multipoint-defect synergy via a step-by-step multielement doping methodology.

Original languageEnglish (US)
Article number1902893
JournalAdvanced Functional Materials
Volume29
Issue number28
DOIs
StatePublished - Jul 11 2019

Fingerprint

Rhenium
rhenium
Doping (additives)
Point defects
Defects
defects
point defects
Transport properties
Vacancies
Carrier concentration
Thermal conductivity
p-type semiconductors
Single crystals
Semiconductor materials
Crystals
thermal conductivity
transport properties
methodology
single crystals
crystals

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Ge, Zhen Hua ; Qiu, Yang ; Chen, Yue Xing ; Chong, Xiaoyu ; Feng, Jing ; Liu, Zi-kui ; He, Jiaqing. / Multipoint Defect Synergy Realizing the Excellent Thermoelectric Performance of n-Type Polycrystalline SnSe via Re Doping. In: Advanced Functional Materials. 2019 ; Vol. 29, No. 28.
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Multipoint Defect Synergy Realizing the Excellent Thermoelectric Performance of n-Type Polycrystalline SnSe via Re Doping. / Ge, Zhen Hua; Qiu, Yang; Chen, Yue Xing; Chong, Xiaoyu; Feng, Jing; Liu, Zi-kui; He, Jiaqing.

In: Advanced Functional Materials, Vol. 29, No. 28, 1902893, 11.07.2019.

Research output: Contribution to journalArticle

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AU - Ge, Zhen Hua

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AU - Feng, Jing

AU - Liu, Zi-kui

AU - He, Jiaqing

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AB - SnSe has attracted much attention due to the excellent thermoelectric (TE) properties of both p- and n-type single crystals. However, the TE performance of polycrystalline SnSe is still low, especially in n-type materials, because SnSe is an intrinsic p-type semiconductor. In this work, a three-step doping process is employed on polycrystalline SnSe to make it n-type and enhance its TE properties. It is found that the Sn0.97Re0.03Se0.93Cl0.02 sample achieves a peak ZT value of ≈1.5 at 798 K, which is the highest ZT reported, to date, in n-type polycrystalline SnSe. This is attributed to the synergistic effects of a series of point defects: (Formula presented.). In those defects, the (Formula presented.) compensates for the intrinsic Sn vacancies in SnSe, the (Formula presented.) acts as a donor, the (Formula presented.) acts as an acceptor, all of which contribute to optimizing the carrier concentration. Rhenium (Re) doping surprisingly plays dual-roles, in that it both significantly enhances the electrical transport properties and largely reduces the thermal conductivity by introducing the point defects, (Formula presented.). The method paves the way for obtaining high-performance TE properties in SnSe crystals using multipoint-defect synergy via a step-by-step multielement doping methodology.

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