Chemical vapor deposition (CVD) is a powerful technique for synthesizing monolayer materials such as transition metal dichalcogenides. It has advantages over exfoliation techniques, including higher purity and the ability to control the chemistry of the products. However, controllable and reproducible synthesis of 2D materials using CVD is a challenge because of the complex growth process and its sensitivity to subtle changes in growth conditions, making it difficult to extend conclusions obtained in one CVD chamber to another. Here, we developed a multiscale model linking CVD control parameters to the morphology, size, and distribution of synthesized 2D materials. Its capabilities are experimentally validated via the systematic growth of MoS2. In particular, we coupled the reactor-scale governing heat and mass transport equations with the mesoscale phase-field equations for the growth morphology considering the variation of edge energies with the precursor concentration within the growth chamber. The predicted spatial distributions of 2D islands are statistically analyzed, and experiments are then performed to validate the predicted island morphology and distributions. It is shown that the model can be employed to predict and control the morphology and characteristics of synthesized 2D materials.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics