N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L. Swenson, David F. Brown, Stacia Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-μ gate length showed a current-gain cutoff frequency (fT) of 17 GHz and a power-gain cutoff frequency (fmax) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.

Original languageEnglish (US)
Pages (from-to)1101-1104
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number10
DOIs
StatePublished - Sep 17 2008

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Electron gas
High electron mobility transistors
Metals
Cutoff frequency
Semiconductor materials
Buffers
Electric fields
Scattering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Wong, Man Hoi ; Pei, Yi ; Chu, Rongming ; Rajan, Siddharth ; Swenson, Brian L. ; Brown, David F. ; Keller, Stacia ; DenBaars, Steven P. ; Speck, James S. ; Mishra, Umesh K. / N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 10. pp. 1101-1104.
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abstract = "We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-μ gate length showed a current-gain cutoff frequency (fT) of 17 GHz and a power-gain cutoff frequency (fmax) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58{\%} power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.",
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Wong, MH, Pei, Y, Chu, R, Rajan, S, Swenson, BL, Brown, DF, Keller, S, DenBaars, SP, Speck, JS & Mishra, UK 2008, 'N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier', IEEE Electron Device Letters, vol. 29, no. 10, pp. 1101-1104. https://doi.org/10.1109/LED.2008.2003543

N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier. / Wong, Man Hoi; Pei, Yi; Chu, Rongming; Rajan, Siddharth; Swenson, Brian L.; Brown, David F.; Keller, Stacia; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

In: IEEE Electron Device Letters, Vol. 29, No. 10, 17.09.2008, p. 1101-1104.

Research output: Contribution to journalArticle

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AU - Wong, Man Hoi

AU - Pei, Yi

AU - Chu, Rongming

AU - Rajan, Siddharth

AU - Swenson, Brian L.

AU - Brown, David F.

AU - Keller, Stacia

AU - DenBaars, Steven P.

AU - Speck, James S.

AU - Mishra, Umesh K.

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AB - We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-μ gate length showed a current-gain cutoff frequency (fT) of 17 GHz and a power-gain cutoff frequency (fmax) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.

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